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| Data Sheet No. 2C4261 Chip Type 2C4261 Geometry 0014 Polarity PNP Generic Packaged Parts: 2N4260, 2N4261 Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for low voltage, low gain RF amplifier applications. Features: Special Characteristics 2N4261, 2N4261UB, 2N4260, 2N4260UB, SD4261, SD4261F, SQ4261, SQ4261F ft = 1.8 GHz (typ) at 10 mA/10V Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 12 kA min. Au - 6.5 kA nom. 2.1 mils x 2.1 mils 2.1 mils x 2.1 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCEO BVCBO BVEBO Test conditions IC = 10.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC= 0 Min 15 15 4.5 Max ------- Unit V dc V dc V dc hFE IC = 10 mA dc, VCE = 1.0 V dc 30 150 --Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 s, duty cycle less than 2%. |
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